ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,807, issued on June 9, was assigned to Kioxia Corp. (Tokyo).

"Memory device" was invented by Takeshi Iwasaki (Kuwana, Japan), Yosuke Matsushima (Yokkaichi, Japan) and Katsuyoshi Komatsu (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of ...