ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,175, issued on June 23, was assigned to Kioxia Corp. (Tokyo).
"Plasma processing apparatus and manufacturing method of semiconductor device" was invented by Seiwa Nishio (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus according to an embodiment includes: an upper electrode that supplies a process gas into a processing container; and an exhaust unit that exhausts the inside of the processing container, in which the upper electrode includes: a diffusion portion that is interposed between the first and second surfaces, the diffusion portion in which the process gas is diffused; a plurality of gas suppl...