US Patent Issued to Kioxia on June 23 for "Nonvolatile semiconductor storage device and manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,628, issued on June 23, was assigned to Kioxia Corp. (Tokyo).

"Nonvolatile semiconductor storage device and manufacturing method" was invented by Kensuke Takahashi (Yokkaichi Mie, Japan), Daisaburo Takashima (Yokohama Kanagawa, Japan), Naoki Kai (Kuwana Mie, Japan) and Yasumi Ishimoto (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a cell block includes memory cells and select transistors. The memory cells correspond are connected in parallel between a local source line and a local bit line. The select transistor is connected between the local bit line and a bit line. The memory cell includes a cell ...