US Patent Issued to Kioxia on June 2 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,574, issued on June 2, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Akiyuki Murayama (Koto, Japan), Yusuke Arayashiki (Kawasaki, Japan), Tsuyoshi Ogikubo (Yokohama, Japan), Suzuka Kajiwara (Kamakura, Japan), Motohiko Fujimatsu (Shinagawa, Japan), Katsuya Nishiyama (Yokohama, Japan) and Kikuko Sugimae (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a memory cell array including a plurality of bit lines, a source line, a plurality of NAND strings, a first and a second sub block, a first word line group included in the first sub block, a second word line group...