ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,523, issued on June 16, was assigned to Kioxia Corp. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Yuta Saito (Yokkaichi, Japan), Shinji Mori (Nagoya, Japan) and Hiroyuki Yamashita (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxy...