US Patent Issued to KIOXIA on July 21 for "Method of manufacturing a semiconductor device by filling mask- defined trenches with an insulating film" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,431, issued on July 21, was assigned to KIOXIA Corp. (Tokyo).

"Method of manufacturing a semiconductor device by filling mask- defined trenches with an insulating film" was invented by Tomoya Oori (Kuwana Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a mask film such that it covers part of a first trench, thereby dividing the first trench in the longitudinal direction to form one or more second trenches; filling a first insulating film into the second trenches; removing the mask film; and forming a second insulating film such that it covers the entire first trench."

The...