US Patent Issued to Kioxia on July 14 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,770, issued on July 14, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Satoshi Nagashima (Yokkaichi Mie, Japan), Hidenori Miyagawa (Yokkaichi Mie, Japan), Atsushi Takahashi (Yokkaichi Mie, Japan) and Shota Kashiyama (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a semiconductor layer extending in a first direction, a first conductive layer extending in a second direction and opposed to the semiconductor layer, an electric charge accumulating layer disposed between the semiconductor layer and the first conductive layer, and a first contact electro...