US Patent Issued to KIOXIA on July 14 for "Semiconductor device and method for producing the same" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,131, issued on July 14, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for producing the same" was invented by Atsushi Kato (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first insulating film; and a wiring disposed in the first insulating film. The wiring includes a first conductor containing copper; a first film formed on a side surface and a bottom surface of the first conductor and containing cobalt; a second film formed on an upper surface of the first conductor and containing copper and silicon; and a third film formed on an upper surface of the first film and cont...