US Patent Issued to KIOXIA on July 14 for "Plasma chemical vapor deposition (CVD) apparatus and film forming method" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,128, issued on July 14, was assigned to KIOXIA Corp. (Tokyo).

"Plasma chemical vapor deposition (CVD) apparatus and film forming method" was invented by Takuya Hirohashi (Ebina Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side ...