US Patent Issued to Kioxia on Jan. 20 for "Semiconductor storage device with transistors of peripheral circuits on two chips" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,120, issued on Jan. 20, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device with transistors of peripheral circuits on two chips" was invented by Nobuaki Okada (Yokohama Kanagawa, Japan) and Toshiki Hisada (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first c...