US Patent Issued to KIOXIA on Feb. 24 for "Semiconductor device, protection circuit, and method for manufacturing protection circuit" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,842, issued on Feb. 24, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device, protection circuit, and method for manufacturing protection circuit" was invented by Tomoyuki Funabasama (Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a third semiconductor layer, a gate electrode, a first layer, and an insulating layer. The first and second semiconductor layers have first and second conductivity types. The third semiconductor layer has the second conductivity type, and is provided on the first semiconduct...