US Patent Issued to Kioxia on Feb. 24 for "Pattern forming method, semiconductor device manufacturing method, and pattern forming apparatus" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,020, issued on Feb. 24, was assigned to Kioxia Corp. (Tokyo).

"Pattern forming method, semiconductor device manufacturing method, and pattern forming apparatus" was invented by Satoshi Mitsugi (Kawasaki Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a pattern forming method includes forming a first resin pattern on a substrate with a first resin. The first resin pattern includes a first transfer pattern and a first mark. A second resin is dispensed to cover the first mark of the first resin pattern. A first pattern is formed including the first transfer pattern and the second resin covering the first mark...