US Patent Issued to Kioxia on Feb. 24 for "Memory device supplying current to first memory cell based on a first current and a second current flowing in second memory cells" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,202, issued on Feb. 24, was assigned to Kioxia Corp. (Tokyo).

"Memory device supplying current to first memory cell based on a first current and a second current flowing in second memory cells" was invented by Naoki Matsushita (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes a first memory cell, a second memory cell, a first interconnect connected to the first memory cell and the second memory cell, a second interconnect connected to the second memory cell, and a third circuit. The third circuit includes a first circuit connectable to the first interconnect and the second interc...