ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,281, issued on Feb. 17, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Kojiro Shimizu (Mie Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes first conductive layers stacked in a first direction. A bit line is above the first conductive layers in the first direction. A second conductive layer and a first insulating layer are between the first conductive layers and the bit line. A first pillar extends through the first conductive layers and the second conductive layer. A first via contact connected to an end of the first pillar is on a bit line side. The distance betwe...