ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,461, issued on Aug. 4, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Mina Hatakeyama (Yokohama Kanagawa, Japan) and Yuki Inuzuka (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device capable of reducing the number of executions of sensing is provided. The semiconductor memory device includes memory cells, word lines that are connected to the memory cells, bit lines that are connectable to the memory cells, and sense amplifiers connectable to the bit lines. A writing operation on the memory cell includes a program operation and a verifying operation. In the verifyin...