US Patent Issued to KIOXIA on Aug. 4 for "Semiconductor device and semiconductor memory device, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,981, issued on Aug. 4, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and semiconductor memory device, and method for manufacturing semiconductor device" was invented by Naomi Fukumaki (Yokkaichi, Japan), Ayaka Sakai (Fujisawa, Japan) and Takayuki Beppu (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and an insulating film formed on the substrate, and an electrode layer comprising molybdenum, formed in contact with the insulating film. The electrode layer has a chlorine concentration gradient such that a first concentration of chlorine in a first portion of the electrode layer ...