US Patent Issued to Kioxia on Aug. 4 for "Oxide semiconductor device and oxide semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,693, issued on Aug. 4, was assigned to Kioxia Corp. (Tokyo).

"Oxide semiconductor device and oxide semiconductor memory device" was invented by Shosuke Fujii (Kuwana Mie, Japan) and Kotaro Noda (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes: a first electrode; a second electrode; a gate electrode between the first electrode and the second electrode; a first insulating layer; a second insulating layer; a gate insulating layer surrounding the gate electrode; an oxide semiconductor layer surrounding the gate insulating layer, the oxide semiconductor layer including a first ...