US Patent Issued to Kioxia on Aug. 25 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,121, issued on Aug. 25, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Shoichi Kabuyanagi (Yokkaichi Mie, Japan), Tsuyoshi Sugisaki (Yokkaichi Mie, Japan) and Shosuke Fujii (Kuwana Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a first conductor, a first oxide semiconductor, a first insulator, a second conductor, a third conductor, and a fourth conductor. The first oxide semiconductor contacts, at one end, the first conductor, and extends in a first direction intersecting a surface of the first conductor. The first...