US Patent Issued to KIOXIA on Aug. 11 for "Semiconductor memory device and method for manufacturing semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,640, issued on Aug. 11, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device and method for manufacturing semiconductor memory device" was invented by Hideto Takekida (Nagoya Aichi, Japan) and Hisashi Harada (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a stacked body, a first metal layer, and a first columnar body. The stacked body includes a plurality of gate electrode layers and a plurality of insulating layers. The plurality of gate electrode layers include a first gate electrode layer, and a second gate electrode layer having a length in a second direction intersecting ...