ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,635, issued on Aug. 11, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Shigehiro Watanabe (Yokkaichi Mie, Japan) and Kojiro Shimizu (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a stacked body with first conductive layers and first insulating layers alternately stacked. The stacked body includes a staircase portion in which the first conductive layers are in a staircase shape. A columnar portion extends in a stacking direction through the stacked body at the staircase portion. The columnar portion includes a semiconductor layer, ...