US Patent Issued to KIOXIA on April 21 for "Semiconductor memory device including a substrate that includes a first region and a second region arranged in a first direction" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,515, issued on April 21, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device including a substrate that includes a first region and a second region arranged in a first direction" was invented by Naomi Ito (Shinagawa, Japan) and Koichi Kishi (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate including a first region and a second region arranged in a first direction, a first wiring extending in the first direction across the first region and the second region, a second wiring disposed in the first region and extending in a second direction that intersects with the first re...