ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,583, issued on April 21, was assigned to Kioxia Corp. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Takuya Kikuchi (Yokkaichi Mie, Japan), Yuya Nagata (Nagoya Aichi, Japan), Masaya Toda (Yokkaichi Mie, Japan), Kappei Imamura (Kuwana Mie, Japan) and Tsubasa Imamura (Kuwana Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover ...