US Patent Issued to JX Advanced Metals on May 19 for "Sputtering target and method for producing same" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,630,917, issued on May 19, was assigned to JX Advanced Metals Corp. (Tokyo).

"Sputtering target and method for producing same" was invented by Daiki Shono (Ibaraki, Japan), Shuhei Murata (Ibaraki, Japan) and Takeo Okabe (Ibaraki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material comprises one or more metal elements, the target material has a crystal grain size of 50 micro metre or less, and the target material has an oxygen concentration of 1000 ppm by mass or less." ...