ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,344, issued on Nov. 3, was assigned to JUSUNG ENGINEERING Co. LTD. (South Korea).
"Thin film formation method" was invented by Jeong Heo (Gwangju-Si, South Korea), Duck Ho Kim (Gwangju-Si, South Korea), Yong Hyun Kim (Gwangju-Si, South Korea), Chang Su Mha (Gwangju-Si, South Korea), Chang Kyun Park (Gwangju-Si, South Korea), Yong Hyun Lee (Gwangju-Si, South Korea) and Chul Joo Hwang (Gwangju-Si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film.In accordance with an exemplary embodiment, a...