US Patent Issued to JSR on June 16 for "Resist underlayer film-forming composition, resist underlayer film, and method of producing semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,686, issued on June 16, was assigned to JSR Corp. (Tokyo).

"Resist underlayer film-forming composition, resist underlayer film, and method of producing semiconductor substrate" was invented by Tomoaki Seko (Tokyo), Yusuke Anno (Tokyo) and Akitaka Nii (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an in...