US Patent Issued to JIANGSU LEUVEN INSTRUMENTS on May 26 for "Control method for sidewall contamination of MRAM magnetic tunnel" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,005, issued on May 26, was assigned to JIANGSU LEUVEN INSTRUMENTS Co. LTD (Xuzhou, China).

"Control method for sidewall contamination of MRAM magnetic tunnel" was invented by Yuxin Yang (Xuzhou, China), Jiahe Li (Xuzhou, China), Taiyan Peng (Xuzhou, China), Dongdong Hu (Xuzhou, China) and Kaidong Xu (Xuzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a control method for sidewall contamination of an MRAM magnetic tunnel. In the control method, there is no need to additionally coat an insulation protection layer on the sidewall of an MTJ layer, but a unique funnel-shaped trench is formed during the etching proc...