ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,816, issued on April 7, was assigned to Japan Display Inc. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Hajime Watakabe (Tokyo), Masashi Tsubuku (Tokyo), Toshinari Sasaki (Tokyo) and Takaya Tamaru (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a...