ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,624, issued on April 21, was assigned to Japan Display Inc. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Hajime Watakabe (Tokyo), Masashi Tsubuku (Tokyo), Toshinari Sasaki (Tokyo) and Takaya Tamaru (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing semiconductor device according to an embodiment includes; forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the metal oxide laye...