US Patent Issued to IVWorks on July 14 for "III-N semiconductor structure and method of manufacturing same" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,843, issued on July 14, was assigned to IVWorks Co. Ltd. (Daejeon, South Korea).

"III-N semiconductor structure and method of manufacturing same" was invented by Young Kyun Noh (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are a III-N semiconductor structure manufactured by growing a III-N material on a superlattice structure layer, formed of AlGaN and InAlN materials, which serves as a buffer layer, and a method for manufacturing the same. The disclosed III-N semiconductor structure includes: a substrate including a silicon material; a seed layer formed on the substrate and including an aluminum nitride (AlN)...