US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Nov. 3 for "Tunneling field effect transistor having buried drain structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,371, issued on Nov. 3, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Tunneling field effect transistor having buried drain structure" was invented by Jin Pyo Hong (Seoul, South Korea), Min Won Kim (Seoul, South Korea) and Ji Hun Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A tunneling field effect transistor having a buried drain structure is provided. The tunneling field effect transistor comprises a semiconductor pattern disposed on a substrate and including a thin part at one end, a thick part at the other end, and a step between the thin part and the thick...