US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on May 12 for "Three-dimensional flash memory having improved integration density" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,348, issued on May 12, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Three-dimensional flash memory having improved integration density" was invented by Yun Heub Song (Seoul, South Korea) and Inho Nam (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a three-dimension flash memory to which an efficient word line connection structure is applied, and a method for manufacturing same, wherein a plurality of word lines are connected to a low decoder respectively through contacts of the plurality of word lines, a plurality of connection wires...