US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Aug. 25 for "Three dimensional flash memory with bulk erasing" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,752, issued on Aug. 25, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Three dimensional flash memory with bulk erasing" was invented by Yun Heub Song (Seoul, South Korea), Bongseok Kim (Seoul, South Korea) and Inho Nam (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional flash memory for promoting integration, and a manufacturing method therefor are disclosed. The three-dimensional flash memory to which a cell on peripheral circuit (COP) structure is applied comprises: a substrate having at least one transistor of a peripheral circuit, formed accordin...