US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Aug. 25 for "Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,740, issued on Aug. 25, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same" was invented by Yun Heub Song (Seoul, South Korea) and Sun Jun Choi (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a three-dimensional flash memory, which reduces leakage current and supports a hole injection erase technique, and a method for manufacturing same. According to an embodiment, the three-dimensional flash memory comprises: a substrate; a channel layer extending in ...