US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on April 14 for "High mobility transistor element resulting from IGTO oxide semiconductor crystallization, and production method for same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,537, issued on April 14, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"High mobility transistor element resulting from IGTO oxide semiconductor crystallization, and production method for same" was invented by Jae Kyeong Jeong (Seoul, South Korea), Bo Kyoung Kim (Seoul, South Korea) and Nuri On (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO ch...