US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERISTY) on March 24 for "Three-dimensional flash memory with high degree of integration" (South Korean Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,221, issued on March 24, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERISTY) (Seoul, South Korea).

"Three-dimensional flash memory with high degree of integration" was invented by Yun Heub Song (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A through silicon via (TSV)-based three-dimensional flash memory having a high degree of integration comprises: at least one memory cell string chip including a plurality of memory cell strings; and a peripheral circuit chip including at least one peripheral circuit, wherein the peripheral circuit chip is arranged below the at least one memory cell string ...