ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,763, issued on May 26, was assigned to ISTE (Hwaseong-si, South Korea).
"Method for forming SiCN thin film" was invented by Geun-Ho Kim (Yongin-si, South Korea), Jong-Sin Hyun (Hwaseong-si, South Korea), Won-Jung Kim (Pyeongtaek-si, South Korea), Dong-Hyeok Choi (Suwon-si, South Korea) and Gwang-Won Seo (Osan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for forming a SiCN thin film. The method includes the steps of: loading a target wafer onto a chuck heater located inside a chamber; operating the chuck heater to allow the target wafer to be heated to a target deposition temperature in the range of 200 to 550deg...