US Patent Issued to IOTMEMORY TECHNOLOGY on Sept. 1 for "Non-volatile memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,204, issued on Sept. 1, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei City, Taiwan).

"Non-volatile memory device" was invented by Der-Tsyr Fan (Taoyuan City, Taiwan), I-Hsin Huang (Taoyuan City, Taiwan), Tzung-Wen Cheng (New Taipei City, Taiwan) and Yu-Ming Cheng (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes at least one memory cell including a substrate, an assist gate, a byte select gate, a floating gate, and an upper gate. The substrate includes a first doped region and a second doped region. The assist gate is disposed on the substrate and adjacent to the second doped region. The b...