US Patent Issued to IOTMEMORY TECHNOLOGY on Aug. 4 for "Non-volatile memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,750, issued on Aug. 4, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei City, Taiwan).

"Non-volatile memory device and method for manufacturing the same" was invented by Der-Tsyr Fan (Taoyuan City, Taiwan), I-Hsin Huang (Taoyuan City, Taiwan), Tzung-Wen Cheng (New Taipei City, Taiwan) and Yu-Ming Cheng (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes at least one memory cell and the memory cell includes a substrate, a select gate, a control gate, a floating gate, and an erase gate. The select gate is disposed on the substrate, and the control gate is disposed on the substrate and laterally sp...