ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,962, issued on Sept. 8, was assigned to IOPTIS CORP. (Los Altos, Calif.).
"Narrow linewidth semiconductor laser" was invented by Georgios Margaritis (Los Altos, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel narrow linewidth laser device is disclosed that is formed monolithically on a semiconductor substrate, such as an indium phosphide substrate, that includes a continuous waveguide with a gain section and a grating section wherein a grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of...