US Patent Issued to Invention And Collaboration Laboratory on Oct. 27 for "Memory device and manufacturing method thereof" (Singaporean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,709, issued on Oct. 27, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Memory device and manufacturing method thereof" was invented by Chao-Chun Lu (Singapore), Li-Ping Huang (Singapore) and Wen-Hsien Tu (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a manufacturing method thereof are provided. The memory device includes an access transistor defined within an active region of a semiconductor substrate and a storage capacitor disposed on the access transistor. A recessed gate structure of the access transistor extends into the active region from above the active region. Source/drain conta...