ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,630, issued on March 24, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore).
"Memory array circuit" was invented by Chao-Chun Lu (Taipei City, Taiwan), Chun Shiah (Hsinchu City, Taiwan) and Shih-Hsing Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array circuit includes a semiconductor substrate, a bit line, a complementary bit line, and a bit line sense amplifier circuit. The semiconductor substrate has an original surface. The bit line sense amplifier circuit is connected to the bit line and the complementary bit line, and the bit line sense amplifier circuit includes a first plurality of t...