US Patent Issued to INVENTION AND COLLABORATION LABORATORY on June 16 for "Semiconductor device structure with efficient heat-removal structures across the chip and monolithic fabrication method therefor" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,619, issued on June 16, was assigned to INVENTION AND COLLABORATION LABORATORY INC. (Taipei City, Taiwan).

"Semiconductor device structure with efficient heat-removal structures across the chip and monolithic fabrication method therefor" was invented by Chao-Chun Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located...