US Patent Issued to INVENTION AND COLLABORATION LABORATORY on July 28 for "Method for forming transistor structure with a vertically grown source and drain" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,494, issued on July 28, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore).

"Method for forming transistor structure with a vertically grown source and drain" was invented by Chao-Chun Lu (Hsinchu, Taiwan), Li-Ping Huang (Hsinchu, Taiwan) and Ming-Hong Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a transistor structure includes steps as follows: A substrate with an original surface is prepared. Next a gate conductive region is formed, wherein at least a portion of the gate conductive region is disposed below the original surface, and a bottom wall and sidewalls of the gate conduct...