ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,124, issued on July 14, was assigned to Invention and Collaboration Laboratory Inc. (Taipei City, Taiwan).
"Memory array circuit" was invented by Chun Shiah (Hsinchu City, Taiwan), Shih-Hsing Wang (Hsinchu, Taiwan) and Chao-Chun Lu (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array circuit includes a semiconductor substrate, a bitline, a complementary bitline, and a bitline sense amplifier circuit, wherein the bitline sense amplifier circuit includes a first plurality of transistors and a first set of connection lines. The semiconductor substrate has an original surface. The bitline sense amplifier circuit is connecte...