US Patent Issued to INVENTION AND COLLABORATION LABORATORY on Aug. 11 for "Planar MOSFET with light, regular and heavily doped regions" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,668, issued on Aug. 11, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore).

"Planar MOSFET with light, regular and heavily doped regions" was invented by Chao-Chun Lu (Hsinchu, Taiwan) and Li-Ping Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a semiconductor substrate, a gate region, a first trench, a first isolation region and a first conductive region. The semiconductor substrate is with an original semiconductor surface. The gate region is over the semiconductor surface. The first trench is formed below the original semiconductor surface. The first isolation region ...