US Patent Issued to INVENTION AND COLLABORATION LABORATORY on Aug. 11 for "Heat removing layer surrounding a transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,968, issued on Aug. 11, was assigned to INVENTION AND COLLABORATION LABORATORY INC. (Taipei City, Taiwan).

"Heat removing layer surrounding a transistor" was invented by Chao-Chun Lu (Hsinchu, Taiwan), Wen-Hsien Tu (Hsinchu, Taiwan) and Feng-Wu Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor circuit structure includes a semiconductor substrate with an original semiconductor surface, an active region within the semiconductor substrate, and a transistor formed based on the active region. The transistor includes a gate structure, a first spacer neighboring to a first sidewall of the gate structure, and a second spac...