US Patent Issued to Invention And Collaboration Laboratory, Etron Technology on June 30 for "Metal-oxide-semiconductor field-effect transistor structure with low leakage current and reserved gate length" (Taiwanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,321, issued on June 30, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore) and Etron Technology Inc. (Hsinchu, Taiwan).

"Metal-oxide-semiconductor field-effect transistor structure with low leakage current and reserved gate length" was invented by Chao-Chun Lu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal-oxide-semiconductor field-effect transistor (MOSFET) structure includes a semiconductor substrate, a gate structure, a channel region, a trench, an isolation region, a first conductive region, and a P-N junction. The semiconductor substrate has a semiconductor surface. The gate structure is ab...