US Patent Issued to INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ on Aug. 4 for "Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivation contact solar cells and thus-created solar cell" (German Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,817, issued on Aug. 4, was assigned to INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ E.V. (Constance, Germany).

"Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivation contact solar cells and thus-created solar cell" was invented by Florian Buchholz (Constance, Germany), Jan Hoss (Constance, Germany), Haifeng Chu (Constance, Germany), Jan Lossen (Cologne, Germany) and Valentin Dan Mihailetchi (Constance, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of t...