ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,240, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Structure with self-aligned offset gate contact and direct backside contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Brent A. Anderson (Jericho, Vt.), Albert M. Chu (Nashua, N.H.) and Ravikumar Ramachandran (Pleasantville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a self-aligned offset frontside gate contact structure and a direct backside source/drain contact structure. The presence of the off-centered frontside gate contact structure is attractive since it mitigates the risk of gate con...