US Patent Issued to International Business Machines on Sept. 8 for "Stacked FET with local contact" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,261, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET with local contact" was invented by Ruilong Xie (Niskayuna, N.Y.), James P. Mazza (Saratoga Springs, N.Y.), Shahrukh Khan (Sandy Hook, Conn.), Iqbal Rashid Saraf (Glenmont, N.Y.), Biswanath Senapati (Albany, N.Y.) and Tenko Yamashita (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first source/drain region, a first contact over the first source/drain region, a second source/drain region, and a lateral contact connecting the second source/drain region to a back end of line (BEOL). Portions of t...